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GaN Process Technology

RFMD® develops and manufactures unmatched, compound semiconductor technologies and offers open, GaN foundry services for our industry-leading 0.5μm Gallium nitride (GaN) on Silicon Carbide (SiC) process technologies. RFMD's world-class manufacturing scale -- supported by one of the largest III-V factories in the world -- enables best-in-class cycle times. RFMD's track record as a high-volume, reliable supplier has earned us "preferred partner" status with the industry's top OEMs. Our extraordinary level of customer service continues to set us apart from the competition

Benefits of Using RFMD's GaN-on-SiC Foundry Services:

  • Linearity and Bandwidth
    • Improved performance
    • Especially Improved for LTE/WiMAX
  • Green
    • More power efficient per mW of RF power
  • Power and Size
    • More RF power per mm2
  • Operating Expenses/Capital Expenses
    • BOM and running costs reduced
    • Reduced total cost of ownership

GaN Versus Other Semiconductor Materials

  • RFMD's GaN wide bandgap allows for higher breakdown voltages and continuous operation at high temperatures.
  • High thermal conductivity of SiC makes it a better substrate than silicon for power amplifier applications that require good heat sinking. Saturated electron velocity of RFMD GaN is much higher than GaAs or silicon, allowing operation at high frequencies.

RFMD GaN Process Technology

RFMD® GaN is production ready. It's a mature, robust technology with extraordinary reliability. Compared to GaAs and Si, RFMD GaN has much higher breakdown voltage and power densities. This enables applications that are not possible with competing process technologies. RFMD's GaN high-power density also allows for smaller devices, reducing the capacitance, while enabling high impedances, wider bandwidths, and reduced cost. Additional benefits of RFMD GaN include: reduced circuit complexity, industry-leading efficiency of operation, reduced cooling requirements, and lighter weight.

GaN1

Optimized For: High Power
Gate Length (µm): 0.5
Qualified Operating Bias (V): 48/65
Breakdown Voltage (V): > 300
Power Density (W/mm): 7.5
Thin Film Resistor (Ω/ ): 100
Epi Resistor:

MIM capacitor: ✓
Through Wafer Via: ✓
Airbridge: -
Dielectric Interconnects: ✓
Power FETs & Switch FETs: ✓

GaN2

Optimized For: High Linearity
Gate Length (µm): 0.5
Qualified Operating Bias (V): 48
Breakdown Voltage (V): > 200
Power Density (W/mm): 3
Thin Film Resistor (Ω/ ): 100
Epi Resistor:

MIM capacitor: ✓
Through Wafer Via: ✓
Airbridge: -
Dielectric Interconnects: ✓
Power FETs & Switch FETs: ✓

GaN3

Optimized For: Power & Linearity
Gate Length (µm): 0.5
Qualified Operating Bias (V): 50
Breakdown Voltage (V): > 240
Power Density (W/mm): 5.5
Thin Film Resistor (Ω/ ): 100
Epi Resistor:

MIM capacitor: ✓
Through Wafer Via: ✓
Airbridge: -
Dielectric Interconnects: ✓
Power FETs & Switch FETs: ✓

GaN6*

Optimized For: High Frequency
Gate Length (µm): 0.14
Qualified Operating Bias (V): 28*
Breakdown Voltage (V): > 50*
Power Density (W/mm): 4*
Thin Film Resistor (Ω/ ): 13*
Epi Resistor:

MIM capacitor: ✓
Through Wafer Via: ✓*
Airbridge: ✓*
Dielectric Interconnects: ✓*
Power FETs & Switch FETs: ✓*

*development/qualification

RFMD Open Foundry Services offers an expanded selection of process technologies for the external designer. High-Power GaN 1 is the original process which was launched in Summer of 2009. RFMD has since added High Linearity GaN 2 and the complementary Integrated Passive Components Technology (IPC3). IPC3 was developed to support RFMD’s GaN processes and provides a lower-cost die technology for implementing passive matching or routing circuits. It is designed to support high current densities and high voltages on die.

Available Services

Design options

  • Dedicated Prototype engineering
  • Dedicated mask set
  • Multi-project wafer

Standard Services

  • Dedicated foundry services business unit offering world-class customer service
  • Rapid cycle time for accelerated time to market
  • Model and simulation support for design success (ADS & AWR)

Additional Services

  • Back-end services, quoted on an individual basis:
    • RF probe testing on production wafers
    • Die picking
    • Packaging
    • Packaged part testing
    • DC and RF environmental and reliability testing
Characteristic Unit Semiconductor (typical materials)
  Silicon Gallium Arsenide Indium Phosphide Silicon Carbide Gallium Nitride
Bandgap eV 1.1 1.42 1.35 3.26 3.49
Electron mobility at 3000K cm2/Vs 1500 8500 5400 700 1000-2000
Saturated electron velocity X107 cm/s 1 1.3 1 2 2.5
Critical breakdown field MV/cm 0.3 0.4 0.5 3 3.3
Thermal conductivity W/cm0K 1.5 0.5 0.7 4.5 >1.5
Relative dielectric constant ER 11.8 12.8 12.5 10 9