RFMD, a global leader in the design and manufacture of high-performance compound semiconductor components, leverages its industry-leading gallium nitride (GaN) technology and manufacturing capability to create innovative, high-power and high-performance GaN power semiconductor devices enabling substantial energy savings for a variety of power conversion applications.
GaN has ideal properties for power conversion devices including performance that is substantially superior to silicon, and more cost effectiveness than other compound power semiconductors such as silicon carbide.
Additionally GaN offers wider band gap, reducing on-resistance at high voltages, higher electron mobility, enabling faster switching, high temperature capability for improved reliability, and high power density for small size.
RFMD’s high-voltage GaN, rGaN-HV, encompasses a family of normally-off power switches to provide a practical 600V GaN solution utilizing a HEMT (high electron mobility transistor) structure. The RFMD source switched FETs (SSFETs), housed in standard TO247 packages, will provide immediate efficiency improvements as a drop-in replacement for super junction transistors or IGBTs in a broad range of applications.
rGaN-HV features up to 650V rated devices, rugged extra BV safety margin, device RDS(ON) 35mΩ and up, very low gate charge and COSS, high peak current capability.
SSFET target applications include IT/Telecom ACDC power supplies, solar inverters, UPS inverters, battery chargers, and high frequency DC/DC converters.