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High Power Gallium Nitride on Silicon Carbide (GaN-SiC) RF Products

GaN Product ImagesRFMD offers a variety of high power GaN HEMT RF products used in both commercial and military applications. RFMD’s GaN products provide higher power density, higher efficiency with improved thermal transfer over conventional silicon devices. These GaN devices offer wider bandwidth performance and lower overall installed cost to end customer. RFMD has defined a GaN production model that best leverages the cost advantages attained by manufacturing in our existing wafer factor – world’s largest III-V commercial wafer factory – located near RFMD’s corporate headquarters in Greensboro, North Carolina. Commercializing III-V semiconductor processes is a RFMD strength forged with the successful release of the industry’s first GaAs HBT power amplifier for the high-volume cellular handset market. Applying that knowledge to the development of gallium nitride (GaN) transistors for commercial and military markets is a RFMD competency.

Applications

CATV

CATV

RFMD is the first manufacturer to offer a portfolio of GaN differential amplifiers targeting CATV transmission line networks. These GaN based CATV power doubler and push-pull amplifiers deliver wideband higher power and the same linearity as GaAs based amplifier modules at >20% less current. CATV GaN based equipment addresses the power saving and increased bandwidth requirements needed by the Multiple System Operators (MSO).

Radar

Radar

RFMD offers discrete and integrated GaN power amplifiers for UHF, L-Band, S-Band radar and C-Band applications. The GaN based amplifiers consist of unmatched power transistors ranging 10W to 140W and matched power transistors up to 500W suitable for ground based, sea-borne and air-borne radar systems. Civilian air traffic and military radar manufacturers looking to increase power in the same form factor, reduce size with similar power or increase overall RF power using the same prime DC power utilize these GaN power amplifiers.

Military Communications/Professional Mobile Radio (PMR)

Military Communications/Professional Mobile Radio (PMR)

RFMD offers a family of GaN power amplifiers designed specifically for Milcom and PMR portable and mobile radios. The GaN product family consists of discrete, partially matched and MMIC amplifiers that provide 4W to 40W covering octave and decade bandwidths from 20 to 2500MHz. Milcom and PMR radio require broadband GaN amplifiers with high efficiency to extend battery life and reduce overall size and weight.

Cellular Infrastructure

Cellular Infrastructure

RFMD’s BTS GaN power amplifiers are designed to meet the demands of current and next generation 3G and 4G cellular networks. These GaN power amplifiers provide 50W to 200W with optimized internal match enabling one tune to cover multiple bands and ideally suited for high efficiency architecture such as Doherty or Envelope Tracking. BTS OEM manufacturers developing Pico to Macro-Cell equipment embrace GaN amplifiers that enable multi-band, multi-standard operation or satisfy wide signal bandwidth demands with high efficiency performance.

Broadband Applications: Jamming, Test & Measurement

Broadband Applications: Jamming, Test & Measurement

RFMD’s GaN process and devices are ideally suited for broadband applications. The intrinsic properties of high breakdown voltage, high power density, low parasitic, and high FT allow for multi-octave to wide instantaneous bandwidth amplifiers. This GaN portfolio includes discrete, MMIC die and packaged devices designed for broadband amplifiers and multi-function transmit/receive modules.

 

High Power GaN Videos

These videos showcase RFMD’s High Power GaN products, assembly and applications.

High Power GaN Technical Articles, Brochures and Application Notes

Find technical articles, brochures and application notes for RFMD’s high power GaN RF products.

High Power GaN Models

RFMD offers GaN non-linear packaged and die models in both Agilent ADS and Microwave Office AWR formats. These models are available for download – registration is required to gain access to RFMD’s GaN HEMT models.

Click the Request Access link on the left menu and follow the registration instructions for access to the GaN models.

To view our entire line of GaN products, please click the "View List of Parts" link on each of the categories below.

All GaN High Power Amplifiers

RFMD delivers a portfolio of superior GaN products for many commercial and military applications. These high power GaN RF devices provide excellent bandwidth performance, enhanced device efficiency, and improved reliability in a small form factor. RFMD GaN products available include amplifiers, packaged discrete transistors, switches and die.

Features:

  • Advanced GaN HEMT Technology
  • Advanced Heat-Sink Technology
  • Wide Bandwidth Operation
  • High Power Density
  • High Efficiency
High Power GaN Parts

Applications:

  • CATV
  • Radar
  • Military Communications/PMR
  • Cellular Infrastructure
  • Broadband Apps

Power IC

RFMD’s Power ICs are wideband power amplifiers designed for CW and pulsed applications such as wireless infrastructure, radar, two-way radios, and general purpose TX amplification. These input matched GaN transistors are packaged in an air cavity ceramic package, which provides excellent thermal stability through the use of advanced heat-sink and power dissipation technologies.

Features:

  • Advanced GaN HEMT technology
  • Advanced heat-sink technology
  • Input internally matched to 50Ω
  • High power added efficiency
  • -40°C to 85°C operating temperature
  • Wide instantaneous bandwidth
  • Large signal models available
Power IC

Applications:

  • Class AB Operation for Public Mobile Radio
  • Power Amplifier Stage for Commercial Wireless Infrastructure
  • General Purpose Tx Amplification
  • Test and Instrumentation
  • Civilian and Military Radar

View RFMD’s Power ICs

Matched Power Transistor (MPT)

RFMD’s MPT products are high power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. These matched GaN power transistors are packaged in a hermetic, flanged ceramic package.

Features:

  • Wideband frequency operation
  • Advanced GaN HEMT technology
  • High peak efficiency and peak power
  • Optimized evaluation board layout for 50Ω operation
  • Integrated matching components for high terminal impedances
Matched Power Transistor (MPT)

Applications:

  • Radar
  • Air traffic control and surveillance
  • General purpose broadband

View RFMD’s Matched Power Transistors (MPTs)

Unmatched Power Transistor (UPT)

RFMD’s UPT products are high power GaN unmatched power transistors designed for CW and pulsed applications. Using an advanced 0.5μm GaN high electron mobility transistor (HEMT) semiconductor process, these high-performance amplifiers show excellent peak drain efficiency and flat gain over a broad frequency range in a single amplifier design.

Features:

  • Broadband operation
  • Advanced GaN HEMT technology
  • Advanced heat-sink technology
Unmatched Power Transistor (UPT)

Applications:

  • Broadcast
  • General purpose broadband amplifiers
  • Cellular wireless infrastructure
  • High power radars
  • Public mobile radio
  • Military & Aerospace
  • Industrial/scientific/medical

View RFMD’s Unmatched Power Transistors (UPTs)

*Note: Also available in die form

Broadband Power Transistor (BPT)

RFMD’s high-power GaN broadband power transistors are optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band, ideal for constant envelope, pulsed, WCDMA, and LTE applications. They are input matched GaN transistors packaged in an air cavity ceramic package, which provides excellent thermal stability.

Features:

  • Advanced GaN HEMT technology
  • High peak modulated power
  • Advanced heat-sink technology
  • -25°C to 85°C operating temperature
  • Optimized for video bandwidth and minimized memory effects
  • RF-tested for 3GPP performance
  • RF-tested for peak power using IS95
Broadband Power Transistor (BPT)

Applications:

  • Commercial wireless infrastructure
  • High efficiency doherty
  • High efficiency envelope tracking
  • Military communications

View RFMD’s Broadband Power Transistors (BPTs)

Die

RFMD’s GaN-on-SiC high power GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. These unmatched GaN transistor die are able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly.

Features:

  • Advanced GaN HEMT technology
  • Broadband operation
  • High efficiency and flat gain
Die

Applications:

  • Commercial Wireless Infrastructure
  • Cellular and WiMAX Infrastructure
  • Civilian and Military Radar
  • General Purpose Broadband Amplifiers
  • Public Mobile Radios
  • Industrial, Scientific, and Medical

View RFMD’s GaN Die

Switches

RFMD’s GaN-on-SiC high power discrete RF switches are designed for military and commercial wireless infrastructure, industrial/scientific/medical, and general purpose broadband RF control and switching applications. The RFSW2100 is an SPDT RF switch suitable for many applications with 75W CW input power compression capability.

Features:

  • Advanced GaN HEMT technology
  • 50V control, 75W/50W CW
  • Low insertion loss, high isolation
  • 50Ω input/output
Switch

Applications:

  • Military Communication
  • Electronic Warfare
  • Commercial Wireless Infrastructure
  • Cellular and WiMAX Infrastructure
  • Civilian and Military Radar
  • General Purpose Broadband Amplifiers
  • Public Mobile Radios
  • Industrial, Scientific and Medical

View RFMD’s GaN Switches

High Power GaN

Request GaN Model Access
RFMD® Corporate Headquarters & GaAs HBT Fabrication Facilities7628 Thorndike RoadGreensboro, NC 27409-9421
Main Phone: 336.664.1233
Customer Service: 336.678.5570
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